Method for forming Ta2O5 dielectric layer

ABSTRACT

A method for forming a Ta 2 O 5  dielectric layer by using an atomic layer deposition (ALD) method and an in-situ plasma treatment. The method includes steps of: a) depositing a Ta 2 O 5  dielectric layer on a substrate; b) performing a plasma treatment using N 2 O gas; c) repeating the steps of a) and b) at least one time; and d) annealing the Ta 2 O 5  dielectric layer for the crystallization of the Ta 2 O 5  dielectric layer.

FIELD OF THE INVENTION

[0001] The present invention relates to a method for forming a Ta₂O₅ dielectric layer and, more particularly, to a method for forming a Ta₂O₅ dielectric layer by using an atomic layer deposition (ALD) method and an in-situ plasma treatment.

DESCRIPTION OF THE PRIOR ART

[0002] With the increase of integration in a semiconductor device, such as a dynamic random access memory (DRAM), a capacitor having high capacitance in a narrow space and superior electrical characteristics of a low leakage current is needed. In order to meet this need, high dielectric material, such as Ta₂O₅, etc., is used as a dielectric layer.

[0003] However, a Ta₂O₅ dielectric layer, which is deposited by a low pressure chemical vapor deposition (LPCVD) method, has a poor step coverage, and thereby the electrical characteristics of such a capacitor are degraded.

[0004] To solve the above-mentioned problem, an atomic layer deposition (ALD) method is introduced. In the ALD method, a plurality of mono atomic layers are deposited, and therefore the step coverage may be improved.

[0005]FIGS. 1A to 1D are cross-sectional views illustrating a conventional capacitor manufacturing process.

[0006] Referring to FIG. 1A, a polysilicon layer 11 is deposited on a substrate 10 on which predetermined processes have been completed. Thereafter, a native oxide layer (not shown) is removed by using an HF solution or a buffer oxide etchant (BOE), and then a rapid thermal process (RTP) is carried out in an NH₃ atmosphere. In case of a semiconductor memory device, transistors, plugs and interlayer insulating layers are formed in the predetermined processes.

[0007] Referring to FIG. 1B, a Ta₂O₅ dielectric layer 12 is deposited on the polysilicon layer by using the ALD method and an in-situ O₂ plasma process.

[0008] The Ta₂O₅ dielectric layer 12 comprises a plurality of mono atomic layers 12 ₁ to 12 _(n) repeatedly formed on the polysilicon layer.

[0009] Referring to FIG. 1C, the Ta₂O₅ dielectric layer 12 is annealed in an O₂ atmosphere in order to crystallize the Ta₂O₅ dielectric layer 12. As an example, an Os plasma treatment is performed to crystallize the Ta₂O₅ dielectric layer 12.

[0010] Referring to FIG. 1D, a top layer 13 is deposited on the Ta₂O₅ dielectric layer 12, thereby forming a capacitor including the polysilicon layer 11, the Ta₂O₅ dielectric layer 12 and the top layer 13.

[0011] The above described conventional method for forming a Ta₂O₅ dielectric layer by using the ALD method and the O₂ plasma treatment has the following problems.

[0012] As shown in FIGS. 1B and 1C, carbon remaining sites “A” are generated in the Ta₂O₅ dielectric layer 12 due to the low reactivity of an O₂. Moreover, oxygen deficiency sites “B” remain in the Ta₂O₅ dielectric layer 12 due to the low activated energy of the oxygen. Accordingly, the electrical characteristics of the capacitor are degraded by the leakage current due to the oxygen deficiency sites.

SUMMARY OF THE INVENTION

[0013] It is, therefore, an object of the present invention to provide a method for forming a Ta₂O₅ dielectric layer capable of improving an electrical characteristic of the layer by depositing the Ta₂O₅ dielectric layer with a plasma atomic layer deposition (ALD) method and an N₂O plasma treatment.

[0014] In accordance with an aspect of the present invention, there is provided a method for forming a Ta₂O₅ dielectric layer, comprising steps of a) depositing a Ta₂O₅ dielectric layer on a substrate prepared in a chamber; b) performing a plasma treatment using N₂O gas; c) repeating the steps of a) and b) at least one time; and d) annealing the Ta₂O₅ dielectric layer for the crystallization of the Ta₂O₅ dielectric layer.

BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Other objects and aspects of the invention will become apparent from the following description of the embodiments with reference to the accompanying drawings, in which:

[0016]FIGS. 1A to 1D are cross-sectional views illustrating a conventional Ta₂O₅ dielectric layer manufacturing process; and

[0017]FIGS. 2A to 2D are cross-sectional views showing a Ta₂O₅ dielectric layer manufacturing process in accordance with the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018] Hereinafter, a method for forming a Ta₂O₅ dielectric layer according to the present invention will be described in detail referring to the accompanying drawings.

[0019]FIGS. 2A to 2D are cross-sectional views showing a Ta₂O₅ dielectric layer manufacturing process in accordance with the present invention.

[0020] Referring to FIG. 2A, a polysilicon layer 21 is deposited on a substrate 20 on which predetermined processes have been completed. Thereafter, a native oxide layer (not shown) is removed by using an HF solution or a buffer oxide etchant (BOE), and then a rapid thermal process (RTP) is carried out in an NH₃ atmosphere. In the case of a semiconductor memory device, transistors, plugs and interlayer insulating layers are formed in the predetermined processes.

[0021] Referring to FIG. 2B, a Ta₂O₅ dielectric layer 22, consisting of a plurality of mono atomic layers, 22 ₁ . . . 22 _(n) is deposited on the polysilicon layer 21 of the substrate 20 prepared in a chamber by the atomic layer deposition (ALD) method and in-situ N₂O plasma treatments. Through the in-situ N₂O plasma treatments, the carbon remaining sites and the oxygen deficiency sites are not generated.

[0022] The deposition process of the Ta₂O₅ dielectric layer 22 using the ALD method and the in-situ N₂O plasma treatments will now be described in more detail.

[0023] First, a mono atomic Ta₂O₅ dielectric layer 22 ₁ is deposited on the polysilicon layer 21 at a temperature of 200° C. to 300° C. and at a pressure of 0.2 Torr to 1.0 Torr. The Ta(OC₂H₅)₅ gas, which is vaporized at a temperature of 170° C. to 190° C., is used as a source gas. After forming the mono atomic Ta₂O₅ dielectric layer 221, the chamber is purged with an N₂ gas.

[0024] Subsequently, the mono atomic Ta₂O₅ dielectric layer 221 is treated with the in-situ N₂O plasma treatment. For the in-situ N₂O plasma treatment, an N₂O gas is introduced into the chamber at a rate of 10 sccm to 500 sccm and then plasma is generated under an RF power of 30 W to 500 W. In the preferred embodiment of the present invention, the in-situ N₂O plasma treatment is performed at the same temperature and pressure condition in which the mono atomic Ta₂O₅ dielectric layer 22 ₁ is deposited, for about 0.1 seconds to 10.0 seconds. After the in-situ N₂O plasma treatment, the chamber is purged with the N₂ gas.

[0025] With the in-situ N₂O plasma treatment, the carbon atoms, remaining in the mono atomic Ta₂O₅ dielectric layer 22 ₁, react with the oxygen atoms and form CO or CO₂; accordingly, the carbon atoms are removed. Also, the oxygen deficiencies in the mono atomic Ta₂O₅ dielectric layer 22 ₁ are reduced by the N₂O plasma, which has a high active energy.

[0026] Thereafter, the deposition of the mono atomic Ta₂O₅ dielectric layers and the in-situ N₂O plasma treatments are performed repeatedly. Accordingly a plurality of mono atomic Ta₂O₅ dielectric layers, for example 22 ₂ to 22 _(n), are formed on the first mono atomic Ta₂O₅ dielectric layer 22 ₁, thereby forming the Ta₂O₅ dielectric layer 22 which has a superior step coverage.

[0027] Referring to FIG. 2C, the Ta₂O₅ dielectric layer 22 is annealed at a temperature of 650° C. to 800° C. for about 10 minutes to 30 minutes in an N₂O or an O₂ atmosphere to crystallize the Ta₂O₅ dielectric layer 22.

[0028] Referring to FIG. 2D, a top electrode 23 is deposited on the Ta₂O₅ dielectric layer 22.

[0029] As described above, a method for forming a Ta₂O₅ dielectric layer in accordance with the present invention improves step coverage by forming a Ta₂O₅ dielectric layer through an atomic layer deposition (ALD) method and an N₂O plasma treatment, and improves the quality of the Ta₂O₅ dielectric layer, thereby enhancing an electrical characteristic.

[0030] Although the preferred embodiments of the invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. 

What is claimed is:
 1. A method for forming a Ta₂O₅ dielectric layer, comprising steps of: a) depositing a Ta₂O₅ dielectric layer on a substrate prepared in a chamber; b) performing a plasma treatment using N₂O gas; c) repeating the steps of a) and b) at least one time; and d) annealing the Ta₂O₅ dielectric layer for crystallization of the Ta₂O₅ dielectric layer.
 2. The method of claim 1, wherein the steps a) and b) are performed in-situ.
 3. The method of claim 1, wherein the step a) includes steps of: a1) flowing Ta(OC₂H₅)₅ gas into the chamber; a2) purging the chamber; a3) flowing a nitrogen bearing gas to generate a nitrogen plasma; and a4) purging the chamber.
 4. The method of claim 3, wherein the nitrogen bearing gas is N₂O gas and wherein the N₂O gas is flowed at a rate of 10 sccm to 500 sccm.
 5. The method of claim 4, wherein an RF power of about 30 W to 500 W is applied to generate the nitrogen plasma.
 6. The method of claim 3, wherein the step a1) is carried out at a temperature of approximately 200° C. to 300° C.
 7. The method of claim 6, wherein the step a1) is carried out at a pressure of 0.2 Torr to 1.0 Torr.
 8. The method of claim 3, wherein the step a3) is carried out for about 0.1 to 10.0 seconds.
 9. The method of claim 1, wherein the step d) is carried out in an atmosphere of N₂O gas or an O₂ gas.
 10. The method of claim 9, wherein the step d) is carried out at a temperature of about 650° C. to 800° C.
 11. The method of claim 10, wherein the step d) is carried out for about 10 minutes to 30 minutes. 